James Pomeroy

University of Bristol
  • May 01, 2019 // 4:30pm – 4:50pm

    11.2 Channel temperature determination for GaN HEMT lifetime testing – Impact of test fixture and device layout.

    Filip Gucmann, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
    James Pomeroy, University of Bristol
    Andrei Sarua, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL
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  • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

    Dong Liu, University of Oxford, University of Bristol
    Daniel Francis, Element Six Technologies
    Firooz Faili, Element Six Technologies
    James Pomeroy, University of Bristol
    Daniel Twitchen, Element Six Technologies
    Martin Kuball, University of Bristol
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  • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

    Martin Kuball, University of Bristol
    Huarui Sun, University of Bristol
    Dong Liu, University of Oxford, University of Bristol
    James Pomeroy, University of Bristol
    Daniel Francis, Element Six Technologies
    Firooz Faili, Element Six Technologies
    Daniel Twitchen, Element Six Technologies
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  • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

    Serge karboyan, University of Bristol
    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol
    Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
    Michael Uren, University of Bristol
    Peter Moens, ON Semiconductor, Corp. R&D
    Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
    Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
    Martin Kuball, University of Bristol
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  • 10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs

    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol
    Benoît Lambert, United Monolithic Semiconductors Germany
    Helmut Jung, United Monolithic Semiconductors GmbH, Ulm, Germany
    Martin Kuball, University of Bristol
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