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James Pomeroy
University of Bristol
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May 01, 2019 // 4:30pm – 4:50pm
11.2 Channel temperature determination for GaN HEMT lifetime testing – Impact of test fixture and device layout.
Filip Gucmann, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TLJames Pomeroy, University of BristolAndrei Sarua, Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL -
16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond
Dong Liu, University of Oxford, University of BristolDaniel Francis, Akash Systems, San Francisco, CA, USAFirooz Faili, Element Six Technologies, Santa Clara, CAJames Pomeroy, University of BristolDaniel Twitchen, Element Six Ltd.Martin Kuball, University of Bristol -
8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties
Martin Kuball, University of BristolHuarui Sun, University of BristolDong Liu, University of Oxford, University of BristolJames Pomeroy, University of BristolDaniel Francis, Akash Systems, San Francisco, CA, USAFirooz Faili, Element Six Technologies, Santa Clara, CADaniel Twitchen, Element Six Ltd. -
8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs
Serge Karboyan, Nexperia. Manchester, UKSara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of BristolJames Pomeroy, University of BristolIndranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United KingdomMichael Uren, University of BristolPeter Moens, ON Semiconductor, Corp. R&DAbishek Banerjee, ON Semiconductor, Oudenaarde 9700, BelgiumMarkus Caesar, ON Semiconductor, Oudenaarde 9700, BelgiumMartin Kuball, University of Bristol -
10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs
Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of BristolJames Pomeroy, University of BristolBenoît Lambert, United Monolithic Semiconductors GermanyHelmut Jung, United Monolithic Semiconductors GmbH, Ulm, GermanyMartin Kuball, University of Bristol -
May 11, 2022 // 5:30pm
12.4 Novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment in packaged devices
Zeina Abdallah, University of BristolNathawat Poopakdec, University of Bristol, Bristol, UK and Navaminda Kasatriyadhiraj Royal Air Force AcademnyMartin Kuball, University of BristolJames Pomeroy, University of BristolDownload Paper -
12.3.2023 Characterization of a Novel Thermal Interface Material based on Nanoparticles for High Power Device Package Assembly
Zeina Abdallah, University of BristolJames Pomeroy, University of BristolNicolas Blasakis, Adamant Composite Ltd.Athanasios Baltopoulos, Adamant Composite Ltd.Antonios Vavouliotis, Adamant Composite Ltd.Martin Kuball, University of Bristol -
10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
Daniel Francis, Akash Systems, San Francisco, CA, USASai Charan Vanjari, University of BristolXiaoyang Ji, University of BristolTatyana Feygelson, U. S. Naval Research LaboratoryJoseph Spencer, U.S. Naval Research LaboratoryHannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLAlan Jacobs, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLMarko Tadjer, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryJames Pomeroy, University of BristolMatthew Smith, University of BristolMartin Kuball, University of BristolLoading... -
10.1.4.2024 Thermal Dissipation Enhancement Using a Metal-Diamond Composite Heat Spreaders in High-Power RF MMICs
Zeina Abdallah, University of BristolJames Pomeroy, University of BristolMartin Kuball, University of BristolLoading... -
11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs
Anjali Anjali, University of BristolJames Pomeroy, University of BristolJr-Tai Chen, SweGaN ABMartin Kuball, University of BristolLoading...