Jie Hong Ng

University of Fukui

  • 8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm

    Jie Hong Ng, University of Fukui
    Joel Asubar, University of Fukui
    Hirokuni Tokuda, University of Fukui
    Masaaki Kuzuhara, University of Fukui
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