Jie Su
Veeco Instruments
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Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures
Jie Su, Veeco InstrumentsBalakrishnan Krishnan, Papasouliotis, Veeco -
MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon
Jie Su, Veeco InstrumentsHongwei LiSeungjae LeeBalakrishnan Krishnan, Papasouliotis, VeecoDong LeeGeorge Papasouliotis -
20.7 Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor
Bojan Mitrovic, Veeco MOCVD Operations.Randhir Bubber, Veeco InstrumentsJie Su, Veeco InstrumentsEarl Marcelo, Veeco MOCVD OperationsMandar Deshpande, Veeco Instruments Inc.Ajit Paranjpe, Veeco Instruments -
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology
Ming Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments