Jinjuan Xiang
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12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer
Download PaperSen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceQilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaXinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKe Wei, Institute of Microelectronics, Chinese Academy of SciencesXiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaShiping Guo, IQE RF LLCJunfeng Li, Chinese Academy of SciencesXinyu Liu, Institute of Microelectronics, Chinese Academy of SciencesChao Zhao, Chinese Academy of SciencesJinjuan XiangShumin ChaiYankui Li