Jiro Yota
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ALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for GaAs HBT Technology
Jiro YotaKai KwokSkyworks Solutions -
4.1 Challenges for Establishing a High Volume, High Yielding BiHEMT Manufacturing Process
Jiang Li, Skyworks Solutions, Inc.Tom Brown, Skyworks Solutions, Inc.Mehran Janani, Skyworks Solutions, Inc.Jiro YotaCristian Cismaru, Skyworks Solutions, Inc.Manjeet Singh, Skyworks Solutions, Inc.Mike Sun, Skyworks Solutions, Inc.Ravi Ramanathan -
5a.1 A Method for Yield and Scaling Characterization of FET Structures in an InGaP/GaAs Merged HBT-FET (BiFET) Technology
Andre MetzgerJiang Li, Skyworks Solutions, Inc.Mike Sun, Skyworks Solutions, Inc.Ravi RamanathanCristian Cismaru, Skyworks Solutions, Inc.Jiro Yota