John Bettencourt

Raytheon IDS
  • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

    Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Theodore Kennedy, Raytheon IDS
    Lovelace Soirez, Novati
    John Bettencourt, Raytheon IDS
    Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    William Davis
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