Jr-Tai Chen

SweGaN AB

  • 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

    Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
    Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
    Mattias Thorsell, Chalmers University of Technology
    Olof Kordina, SweGaN AB
    Jr-Tai Chen, SweGaN AB
    Niklas Rorsman, Chalmers University of Technology
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  • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

    Jan Grünenpütt, United Monolithic Semiconductors France
    Daniel Sommer, United Monolithic Semiconductorss GmBH
    Jörg Splettstößer, United Monolithic Semiconductors – GmbH
    Olof Kordina, SweGaN AB
    Jr-Tai Chen, SweGaN AB
    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Hervé Blanck, United Monolithic Semiconductors
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  • 11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs

    Anjali Anjali, University of Bristol
    James Pomeroy, University of Bristol
    Jr-Tai Chen, SweGaN AB
    Martin Kuball, University of Bristol
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