[embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/8.3.2021_Thin-Al0.5Ga0.5NGaN-HEMTs-on-QuanFINE-Structure_20210402.pdf” download=”all” viewer=”google”]
Jr-Tai Chen
SweGaN AB
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8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
Ding-Yuan Chen, SweGaN AB and Chalmers University of TechnologyKai-Hsin Wen, SweGaN AB and Chalmers University of TechnologyMattias Thorsell, Chalmers University of TechnologyOlof Kordina, SweGaN ABJr-Tai Chen, SweGaN ABNiklas Rorsman, Chalmers University of TechnologyDownload Paper -
8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
Jan Grünenpütt, United Monolithic Semiconductors FranceDaniel Sommer, United Monolithic Semiconductorss GmBHJörg Splettstößer, United Monolithic Semiconductors – GmbHOlof Kordina, SweGaN ABJr-Tai Chen, SweGaN ABHermann Stieglauer, United Monolithic Semiconductors GermanyHervé Blanck, United Monolithic SemiconductorsDownload Paper[embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/8.2.2021_210331_Final_Paper_CS_Mantech_Quanfine_AlGaN-GaN-HEMT.pdf” download=”all” viewer=”google”]
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11.2.2.2024 Mapping of Local Threshold Voltage in AlGaN/GaN HEMTs
Anjali Anjali, University of BristolJames Pomeroy, University of BristolJr-Tai Chen, SweGaN ABMartin Kuball, University of Bristol[embeddoc url=”https://csmantech.org/wp-content/uploads/2024/06/11.2.2.2024-Mapping-of-Local-Threshold-Voltage-in-AlGaNGaN-HEMTs.pdf” download=”all”]