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Naval Research Laboratory

  • Boron-Doped P Nanocrystalline Diamond Gate Electrode for AlGaN-GaN HEMTs

    Marko J. Tadjer, U.S. Naval Research Laboratory
    Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
    Jennifer K. Hite, Naval Research Laboratory
    Bradford B. Pate, U.S. Naval Research Laboratory, Washington DC
    Charles R. Eddy, Naval Research Laboratory
    Jr., Naval Research Laboratory
    Francis J. Kub, Naval Research Laboratory
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  • Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits

    Richard P. Schneider
    Jr., Naval Research Laboratory
    Jacco L. Pleumeekers
    Damien J. H. Lambert
    Peter W. Evans
    Andrew G. Dentai
    Paul Liu, Infinera Corporation
    Jon Rossi
    Scott Craig
    Margherita Lai
    Vikrant Lal, Infinera Corporation
    Naksup Kim
    Eva Strzelecka
    Pavel Studenkov
    Adam James, Infinera Corporation
    Scott Corzine
    Kuan-Pei Yap
    Peter Debackere, Infinera Corporation
    Shashank Agashe
    Jeffrey Glick
    Christopher Hill
    Quisheng Chen
    Wayne Williams
    Sanjeev Murthy
    Ranjani Muthiah
    Mark Missey
    Scott DeMars
    Mehrdad Ziari, Infinera Corporation
    Masaki Kato
    Radhakrishnan Nagarajan
    Arnold Chen
    Sheila Hurtt
    Fred Kish, Infinera Corporation
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  • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

    Virginia Wheeler, U.S. Naval Research Laboratory
    David Shahin, University of Maryland
    Marko Tadjer, U.S. Naval Research Laboratory
    Lunet Luna, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
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  • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

    David Shahin, University of Maryland
    Virginia Wheeler, U.S. Naval Research Laboratory
    Marko Tadjer, U.S. Naval Research Laboratory
    Lunet Luna, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Aris Christou, University of Maryland-College Park
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  • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

    David Shahin, University of Maryland
    Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Virginia Wheeler, U.S. Naval Research Laboratory
    Marko Tadjer, U.S. Naval Research Laboratory
    Tatyana Feygelson, Naval Research Laboratory
    Bradford Pate, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
    Aris Christou, University of Maryland-College Park
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  • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

    Marko Tadjer, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
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