Junxi Wang

Institute of Semiconductor, Chinese Academy of Sciences, Beijing

  • 10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire

    Shuai Yang, Institute of Semiconductors, Chinese Academy of Sciences
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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  • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

    Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    C. Chen, Momentive Technologies
    Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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  • 12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes

    Yanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Jianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Xiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Tongbo Wei
    Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Jinmin Li, NAURA Technology Group Co., Ltd.
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