Abstract
Lateral p-GaN gate-based power HEMTs are fabricated using a 9 μm thick GaN buffer on 200 mm GaN-on-QST® engineered substrates with a poly-AlN core, targeting 1200 V applications. The fabricated devices on engineered p-GaN gate on 9 μm thick GaN buffer show good ON/OFF state electrical characteristics and breakdown ~ 1800 V. The reliability of the fabricated p-GaN HEMTs were evaluated by a 1000-hour high temperature reverse bias (HTRB) stress test at 1200 V. No impact of HTRB stress was observed on electrical parameters and the devices yield a high pass rate.
K. Greens
imec
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3A.5 – 1000-Hour HTRB Test on 1200 V Lateral HEMTs with Engineered p-GaN Gate
S. Kumar, imecM. Borga, imecD. Cingu, imecK. Greens, imecA. Vohra, imec, Leuven, BelgiumBenoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, BelgiumNiels Posthuma, ImecS. Decoutere, imec