K. -H. Wang

Wavetek Microelectronics Corporation

  • 12.18 – 0.25μm GaN on Silicon HEMT Technology for RF Application

    H. -C. Lin, Wavetek Microelectronics Corporation
    T. -P. Chen, Wavetek Microelectronics Corporation
    K. -Y Chen, Wavetek Microelectronics Corporation
    K. -H. Wang, Wavetek Microelectronics Corporation
    G. -Y. Lee, Wavetek Microelectronics Corporation
    A. C. L. Hou, Wavetek Microelectronics Corporation
    H. -C. Chiu, Wavetek Microelectronics Corporation
    B. J. F. Lin, Wavetek Microelectronics Corporation

    12.18 Final.2025

    Abstract
    This material presents the technology development on 0.25um GaN High Electron Mobility Transistor (HEMT) on Silicon in WAVETEK Microelectronics. Epitaxy, process, BVD and RF characteristics are included in this material. The first process flow is designed for averaged power ≤ 20W and operation voltage@28V diverse power amplifier (PA) applications, e.g. massive MIMO basestation PA or phase array radar. DC performance of 4x100um device showed breakdown voltage > 200V. And RF results show fT, fmax (Vd=28V) = 28, 95 GHz, respectively. MSG/MAG= 23 dB @Vd= 28V and frequency= 3.5GHz. With optimized epitaxy structure and process, current collapse has been improved to 11.3%. Based on continuous wave (CW) load-pull measurement with harmonic tuning, (Vd=28V, Jc=20mA/mm, @3.5GHz), PAE@P3dB can achieve 70%, Gain= 19dB and Pout@P3dB can reach 32 dBm. For the other application of Vd=10V, e.g. WiFi Router PA and direct to cell PA, the 0.4mm HEMT device can achieve 2.1W. Adjacent Channel Leakage Ratio (ACLR) has been measured. The 4x100um HEMT results of raw ACPR (without DPD) are -39.3dBc/-38.6dBc. The overall performance is promising for 0.25um GaN on Silicon technology. The overall performance is promising for 0.25um GaN on Silicon technology.