12.1 Final.2025

Abstract
ZnₓCd₁₋ₓTe (ZnCdTe) is a tunable II-VI semiconductor alloy with a direct bandgap energy ranging from 1.44 eV (CdTe) to 2.26 eV (ZnTe), making it a promising candidate for single-junction and tandem solar cells [1]. However, its performance is hindered by deep-level defects, such as cadmium vacancies and interstitials, which reduce carrier concentrations and lifetimes. While shallow-level doping is critical for optimizing conductivity, it remains underexplored in ZnCdTe[2]. This study investigates phosphorus (P) doping in ZnCdTe thin films grown on GaAs(100) substrates via molecular beam epitaxy (MBE), using Zn₃P₂ as the P source. By systematically varying the Zn₃P₂ flux, we examine the structural, optical, and electrical properties of P-doped ZnCdTe. The X-ray diffraction (XRD) reveals controlled Zn incorporation, while photoluminescence (PL) spectroscopy demonstrates bandgap tuning and defect mitigation.