Kai Cheng

Enkris Semiconductor, Inc.
  • May 01, 2019 // 2:00pm – 2:20pm

    9.2 Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

    Riad Kabouche, IEMN-CNRS, Villeneuve d'Ascq
    Idriss Abid, IEMN-CNRS, Villeneuve d'Ascq
    Malek Zegaoui, IEMN-CNRS, Villeneuve d'Ascq
    Kai Cheng, Enkris Semiconductor, Inc.
    Farid Medjdoub, IEMN-CNRS, Villeneuve d'Ascq
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  • 20.8 Thick (6 μm) n-type GaN-on-Si Epi-Layers for Vertical Power Devices

    Liyang Zhang, Enkris Semiconductor, Inc.
    Peng Xiang, Enkris Semiconductor, Inc.
    Kai Liu, Enkris Semiconductor, Inc.
    Hongjing Huo, Enkris Semiconductor, Inc.
    Hao Ding, Enkris Semiconductor, Inc.
    Ni Yin, Enkris Semiconductor, Inc.
    Kai Cheng, Enkris Semiconductor, Inc.
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