This work describes an on-going effort to develop and mature a 140 nm GaN MMIC technology with a focus on efficient power amplification at frequencies ranging from DC to 50 GHz and a 90 nm technology targeted towards V- and W-band applications, and then release the technologies within a foundry process that is open to the DoD community.
BAE Systems Inc
140 nm and 90 nm GaN MMIC Technology for Millimeter-wave Power ApplicationsJose Diaz, BAE Systems IncDavid Brown, HRL Laboratories, LLC.Carlton Creamer, BAE Systems IncKanin Chu, BAE Systems IncRichard Isaak, BAE Systems IncLouis Mt. Pleasant, BAE Systems IncDonald Mitchell, BAE Systems IncPuneet Srivastava, BAE Systems IncWen Zhu, BAE Systems IncHong Lu, BAE Systems IncDownload Paper
May 12, 2022 // 3:20pm
18.14 GaN Wafer Level AuSn Solder Deposition Wen Zhu, Kanin Chu, and Blair Coburn BAE Systems, Nashua, NH USAWen Zhu, BAE Systems IncKanin Chu, BAE Systems IncBlair Coburn, BAE Systems