This work describes an on-going effort to develop and mature a 140 nm GaN MMIC technology with a focus on efficient power amplification at frequencies ranging from DC to 50 GHz and a 90 nm technology targeted towards V- and W-band applications, and then release the technologies within a foundry process that is open to the DoD community.
-
140 nm and 90 nm GaN MMIC Technology for Millimeter-wave Power Applications
-
May 12, 2022 // 3:20pm
18.14 GaN Wafer Level AuSn Solder Deposition Wen Zhu, Kanin Chu, and Blair Coburn BAE Systems, Nashua, NH USA
Download Paper
Loading...
-
3.5.2023 Transfer and Implementation of AFRL 140nm Technology on 6-in GaN on SiC
Reload document 
Open in new tab