Ke Wei
Institute of Microelectronics, Chinese Academy of Sciences
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4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique
Download PaperJinhan Zhang, University of Electronic Science and Technology of ChinaSen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceXuanwu Kang, Institute of Microelectronics, Chinese Academy of SciencesXinhua Wang, Institute of Microelectronics, Chinese Academy of SciencesKe Wei, Institute of Microelectronics, Chinese Academy of SciencesYijun Shi, University of Electronic Science and Technology of ChinaQi Zhou, University of Electronic Science and Technology of ChinaWanjun Chen, University of Electronic Science and Technology of ChinaBo Zhang, University of Electronic Science and Technology of ChinaXinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences -
12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer
Download PaperSen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceQilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaXinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKe Wei, Institute of Microelectronics, Chinese Academy of SciencesXiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaShiping Guo, IQE RF LLCJunfeng Li, Chinese Academy of SciencesXinyu Liu, Institute of Microelectronics, Chinese Academy of SciencesChao Zhao, Chinese Academy of SciencesJinjuan XiangShumin ChaiYankui Li