Kei May Lau

Hong Kong University of Science and Technology

  • 20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric

    Huaxing Jiang, Hong Kong University of Science and Technology
    Chao Liu, Hong Kong University of Science and Technology
    Yuying Chen, Hong Kong University of Science and Technology
    Chak Wah Tang, Hong Kong University of Science and Technology
    Kei May Lau, Hong Kong University of Science and Technology
    Download Paper

  • 14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods

    Billy Lai, Hong Kong University of Science and Technology
    Qiang Li, Hong Kong University of Science and Technology
    Kei May Lau, Hong Kong University of Science and Technology
    Download Paper

  • 11.1 Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation

    Huaxing Jiang, Hong Kong University of Science and Technology
    Chao Liu, Hong Kong University of Science and Technology
    Xing Lu, Hong Kong University of Science and Technology
    Kei May Lau, Hong Kong University of Science and Technology
    Download Paper

  • 11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs

    Kun Yu, Xi’an Jiaotong University
    Chao Liu, Hong Kong University of Science and Technology
    Huaxing Jiang, Hong Kong University of Science and Technology
    Xing Lu, Hong Kong University of Science and Technology
    Kei May Lau, Hong Kong University of Science and Technology
    Anping Zhang, Xi'an Jiaotong University
    Download Paper