In this study, we have developed a technique for forming GaN through-substrate vias (TSV) using inductively coupled plasma (ICP) dry etching with a gas mixture of Cl2/BCl3. A 91 μm-deep GaN via-hole having a diameter of 80 μm was successfully formed at a high etching rate of 1.5 μm/min and a high etching selectivity of 35. We discuss pillar formation, RIE lag, loading effects and etch uniformity in high-rate ICP etching, which are critical issues related to the yield of via-hole fabrication. Finally, we investigated the effect of GaN TSVs on heat dissipation by thermal simulation.
Fujitsu Laboratories Ltd.
High-rate ICP Etching for GaN Through-substrate Via of GaN-on-GaN HEMTsKeiji Watanabe, Fujitsu Laboratories Ltd.Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Naoya Okamoto, Fujitsu Laboratories Ltd.Atsushi Takahashi, Fujitsu Laboratories Ltd.Atsushi Takahashi, Fujitsu LimitedYuichi Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd.Yuichi Minoura, Fujitsu Laboratories Ltd.Yusuke Kumazaki, Fujitsu LimitedYusuke Kumazaki, Fujitsu Laboratories Ltd.Masato Nishimori, Fujitsu LimitedMasato Nishimori, Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Shiro Ozaki, Fujitsu LimitedKozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu LimitedToshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Laboratories Ltd.Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.Naoki Hara, Fujitsu Laboratories Ltd.Naoki Hara, Fujitsu LimitedKeiji Watanabe, Fujitsu LimitedDownload Paper
May 12, 2022 // 10:40am
14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real SystemsYohei Otoki, SCIOCSMasatomo Shibata, SCIOCSTomoyoshi Mishima, Osaka UniversityHiroshi Ohta, Osaka UniversityY. Mori, Osaka UniversityKeiji Watanabe, Fujitsu Laboratories Ltd.Naoya Okamoto, Fujitsu Laboratories Ltd.Masayoshi Yamamoto, Nagoya UniversityKoji Shiozaki, Nagoya UniversitySatoshi Tamura, Panasonic CorporationMasayuki Imanishi, Osaka UniversityKazunori Kidera, Panasonic CorporationJunichi Takino, Panasonic CorporationYoshio Okayama, Panasonic CorporationYoshio Honda, Nagoya UniversityHiroshi Amano, Nagoya University