In this study, we have developed a technique for forming GaN through-substrate vias (TSV) using inductively coupled plasma (ICP) dry etching with a gas mixture of Cl2/BCl3. A 91 μm-deep GaN via-hole having a diameter of 80 μm was successfully formed at a high etching rate of 1.5 μm/min and a high etching selectivity of 35. We discuss pillar formation, RIE lag, loading effects and etch uniformity in high-rate ICP etching, which are critical issues related to the yield of via-hole fabrication. Finally, we investigated the effect of GaN TSVs on heat dissipation by thermal simulation.
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High-rate ICP Etching for GaN Through-substrate Via of GaN-on-GaN HEMTs
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May 12, 2022 // 10:40am
14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
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