Kelly Ip
Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
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Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEKelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEMark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEYu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEJohn P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEDoug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEGabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEOleg Laboutin, IQEChien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQETina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE -
3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL
Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEKelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQETheodore Kennedy, Raytheon IDSLovelace Soirez, NovatiJohn Bettencourt, Raytheon IDSDoug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEGabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQETina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEWilliam Davis