Kelly Ip

Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
  • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

    Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Oleg Laboutin, IQE
    Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
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  • 3.4 Towards a Si Foundry Compatible, High Performance, 0.25 um Gate, GaN on Si MMIC Process on High Resistance 200mm Si With a Cu Damascene BEOL

    Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Theodore Kennedy, Raytheon IDS
    Lovelace Soirez, Novati
    John Bettencourt, Raytheon IDS
    Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    William Davis
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