In this work fabrication of MISCAP structures was achieved on n-type gallium nitride using atomic layer deposited silicon nitride as the dielectric layer and sputtered ruthenium contacts. Preliminary values extracted from C-f data suggests very high capacitance densities up to 3.18 μF∙cm-2 and very high accumulation-mode field effect mobility, as high as 325 cm2V-1s-1 at a bias voltage of 2.5 V.
University of Alberta
Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaNKevin Voon, University of AlbertaKyle Bothe, University of AlbertaPouyan Motamedi, University of AlbertaDouglas Barlage, University of AlbertaKen Cadien, University of Alberta
Plasma Enhanced Atomic Layer Deposited Silicon Nitride on GaN MISCAPs with High Charge and MobilityKen Cadien, University of AlbertaEric Milburn, University of AlbertaAlex Ma, University of AlbertaGem Shoute, University of AlbertaDoug Barlage, University of AlbertaDownload Paper