Kevin J. Chen
The Hong Kong University of Science and Technology
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5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric
Jiabei He, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyZhaofu Zhang, The Hong Kong University of Science and TechnologyGaofei Tang, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology -
5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study
Zhaofu Zhang, The Hong Kong University of Science and TechnologyMengyuan Hua, The Hong Kong University of Science and TechnologyJiabei He, The Hong Kong University of Science and TechnologyQingkai Qian, The Hong Kong University of Science and TechnologyKevin J. Chen, The Hong Kong University of Science and Technology -
9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
Mengyuan Hua, The Hong Kong University of Science and TechnologyYunyou Lu, The Hong Kong University of Science and TechnologyShenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of ScienceYong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of ScienceBaoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of ScienceKevin J. Chen, The Hong Kong University of Science and Technology