15.3.2023_Landi-KK_CSMantech2023_ExtendedAbstract_CharacterizationOfNitridatedGa2O3
Kevin (Kim) Kyekyoon
University of Illinois at Urbana-Chamapign
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AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment
Liang Pang, University of Illinois at Urbana-ChamapignOgyun Seok, Kumoh National Institute of TechnologyKevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign -
15.3.2023 Characterization of Nitridated Ga2O3 for GaN-on-Ga2O3 Power Device Applications
Matthew Landi, University of Illinois at Urbana-ChampaignFrank Kelly, University of Illinois at Urbana-ChampaignRiley Vesto, University of Illinois at Urbana-ChampaignMarko J. Tadjer, U.S. Naval Research LaboratoryKyekyoon Kim, University of Illinois at Urbana-Champaign