Kyle Bothe

University of Alberta
  • Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN

    Kevin Voon, University of Alberta
    Kyle Bothe, University of Alberta
    Pouyan Motamedi, University of Alberta
    Douglas Barlage, University of Alberta
    Ken Cadien, University of Alberta
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  • May 01, 2019 // 4:40pm – 5:00pm

    12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

    Kyle Bothe, University of Alberta
    Terry Alcorn, Wolfspeed | A Cree Company
    Jennifer Gao, Wolfspeed | A Cree Company
    Chris Hardiman, Wolfspeed | A Cree Company
    Evan Jones, Wolfspeed | A Cree Company
    Dan Namishia, Wolfspeed | A Cree Company
    Fabian Radulescu, Wolfspeed | A Cree Company
    Satyaki Ganguly, Wolfspeed | A Cree Company
    Don Gajewski, Wolfspeed | A Cree Company
    Jeremy Fisher, Wolfspeed | A Cree Company
    Scott Sheppard, Wolfspeed | A Cree Company
    Jeffrey Barner, Wolfspeed | A Cree Company
    Jim Milligan, Wolfspeed | A Cree Company
    Bruce Schmukler, Wolfspeed | A Cree Company
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  • 6a.1 Plasma-Enhanced ALD for Improved MOS Interfaces in III-V Semiconductors

    Vallen Rezazadeh, University of Alberta
    Kyle Bothe, University of Alberta
    Amir Afshar, University of Alberta
    Kenneth Cadien, University of Alberta
    Douglas Barlage, University of Alberta
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