Abstract
Cost efficiency for data centers is providing an opportunity for quantum dot laser technology to move from a niche photonic process to a widely-adopted technology. This in turn drives the need for high-volume manufacturing methodologies in the production of QD epitaxial wafers. At the same time, integration of QDLs with Si photonics is an emerging focus. Epitaxy foundries such as IQE are drawing on their history of high-volume wafer manufacture to meet and manage the complexity associated with scaling QD epitaxy combined with end user device and integration needs. IQE is also able to leverage its capabilities to support next generation and emerging end user applications.
Mark Furlong
IQE, Cardiff, UK
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May 01, 2019 // 10:50am – 11:20am
8.2 Heterointegration of III-V Device Structures on Si Substrates via Direct MBE Growth
Amy Liu, IQE PADmitri Lubyshev, IQE PAJoel Fastenau, IQE PAMatt Fetters, IQE PAHubert Krysiak, IQE PAJoe Zeng, IQE PAMike Kattner, IQE PAPhil Frey, IQE PAScott Nelson, IQE PAXiao-Ming Fang, IQE PAAled Morgan, IQE SiliconStuart Edwards, IQE SiliconMark Furlong, IQE, Cardiff, UK -
11A.3 – High Volume Quantum Dot Epitaxial Wafer Manufacturing to Meet Demands of AI Driven Data Centers
Andrew Clark, IQE, Cardiff, UKK. Sautter, IQE, Cardiff, UKMark Furlong, IQE, Cardiff, UK