Mark Goorsky

University of California, Los Angeles
  • 9.2 Investigation of the Impacts of Interfacial Layers on the Degradation of GaN-on-Si HEMTs under Electrical Step Stress Testing

    Luke Yates, Georgia Institute of Technology
    Chien-Fong Lo, IQE
    Tingyu Bai, University of California, Los Angeles
    Mark Goorsky, University of California, Los Angeles
    Wayne Johnson, IQE
    Samuel Graham, Georgia Institute of Technology
    Download Paper
  • 12.0.7.2024 Lapping and Chemical Mechanical Polishing of wide and ultra-wide bandgap semiconductors

    K. Pan, University of California Los Angeles
    K. Huynh, University of California, Los Angeles
    M.S. Goorsky, University of California, Los Angeles
    Loader Loading...
    EAD Logo Taking too long?

    Reload Reload document
    | Open Open in new tab

    Download [1.30 MB]