Masaaki Kuzuhara

University of Fukui
  • 4.3 Optimized Design of 3-Dimensional Field Plate in AlGaN/GaN HEMTs for Collapse-Free Operation

    Atsuya Suzuki, University of Fukui
    Joel Asubar, University of Fukui
    Hirokuni Tokuda, University of Fukui
    Masaaki Kuzuhara, University of Fukui
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  • 14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation

    Ryota Yamaguchi, University of Fukui
    Taisei Yamazaki, University of Fukui
    Takashi Nishitani, University of Fukui
    Joel T. Asubar, University of Fukui
    Hirokuni Tokuda, University of Fukui
    Masaaki Kuzuhara, University of Fukui
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  • 8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm

    Jie Hong Ng, University of Fukui
    Joel Asubar, University of Fukui
    Hirokuni Tokuda, University of Fukui
    Masaaki Kuzuhara, University of Fukui
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