Masahito Kanamura

Fujitsu Laboratories Ltd.

  • Effect of Oxidant Source on Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al2O3 Gate Insulator films

    Shiro Ozaki, Fujitsu Limited
    Toshihiro Ohki, Fujitsu Laboratories Ltd.
    Masahito Kanamura, Fujitsu Laboratories Ltd.
    Tadahiro Imada, Fujitsu Laboratories Ltd.
    Norikazu Nakamura, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Naoya Okamoto, Fujitsu Laboratories Ltd.