Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.
Michael Uren
University of Bristol
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Simulation of Leakage Induced Suppression of Bulk Dynamic RON in Power Switching GaN-on-Si HEMTs
Martin Kuball, University of BristolMichael Uren, University of BristolStefano Dalcanale, University of BristolFeiyuan Yang, University of BristolAhmed Nejim, Silvaco EuropeStephen Wilson, Silvaco EuropeDownload Paper -
18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices
Download PaperWilliam Waller, University of BristolMark Gajda, NXP SemiconductorsSaurabh Pandey, NXP SemiconductorsJohan Donkers, NXP SemiconductorsDavid Calton, NXP SemiconductorsJeroen Croon, NXP SemiconductorsSerge Karboyan, Nexperia. Manchester, UKMichael Uren, University of BristolMartin Kuball, University of Bristol -
5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs
Download PaperAlexander Pooth, University of BristolMichael Uren, University of BristolTrevor Martin, IQE Europe, St Mellons, Cardiff, UKMartin Kuball, University of Bristol -
8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs
Download PaperSerge Karboyan, Nexperia. Manchester, UKSara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of BristolJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKIndranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United KingdomMichael Uren, University of BristolPeter Moens, ON Semiconductor, Corp. R&DAbishek Banerjee, ON Semiconductor, Oudenaarde 9700, BelgiumMarkus Caesar, ON Semiconductor, Oudenaarde 9700, BelgiumMartin Kuball, University of Bristol