Michael Uren

University of Bristol

  • Simulation of Leakage Induced Suppression of Bulk Dynamic RON in Power Switching GaN-on-Si HEMTs

    Martin Kuball, University of Bristol
    Michael Uren, University of Bristol
    Stefano Dalcanale, University of Bristol
    Feiyuan Yang, University of Bristol
    Ahmed Nejim, Silvaco Europe
    Stephen Wilson, Silvaco Europe

    Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.

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  • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

    William Waller, University of Bristol
    Mark Gajda, NXP Semiconductors
    Saurabh Pandey, NXP Semiconductors
    Johan Donkers, NXP Semiconductors
    David Calton, NXP Semiconductors
    Jeroen Croon, NXP Semiconductors
    Serge Karboyan, Nexperia. Manchester, UK
    Michael Uren, University of Bristol
    Martin Kuball, University of Bristol
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  • 5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs

    Alexander Pooth, University of Bristol
    Michael Uren, University of Bristol
    Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
    Martin Kuball, University of Bristol
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  • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

    Serge Karboyan, Nexperia. Manchester, UK
    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
    Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
    Michael Uren, University of Bristol
    Peter Moens, ON Semiconductor, Corp. R&D
    Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
    Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
    Martin Kuball, University of Bristol
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  • May 12, 2022 // 11:30am

    14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness

    Hyun-Seop Kim, University of Bristol, Bristol, UK
    Hassan Hirshy, IQE, Cardiff, UK
    Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
    Robert Harper, Compound Semiconductor Centre, Cardiff, UK
    Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
    Matin Kuball, University of Bristol, Bristol, UK,
    Michael J Uren, University of Bristol, Bristol, UK
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  • 4.4.2023 Origin of Transconductance roll-off in mmWave AlGaN/GaN HEMTs

    Terirama Thingujam, University of Bristol
    Michael J Uren, University of Bristol, Bristol, UK
    Niklas Rorsman, Chalmers University of Technology
    Matthew Smith, University of Bristol
    Andrew Barnes, European Space Agency
    Michele Brondi, Akkodis for European Space Agency (ESA)
    Martin Kuball, University of Bristol

    4.4.2023 CS_MANTECH_2023_Terirama_Thingujam_UofBristol_paper_4.4_revised