Minseok Kim
Student Presentation
Seoul National University
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High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2
Woojin Choi, Seoul National UniversityHojin Ryu, Student Presentation Seoul National UniversityOgyun Seok, Kumoh National Institute of TechnologyMinseok Kim, Student Presentation Seoul National UniversityHo-Young Cha, Student Presentation Seoul National University