The GaN HEMT was commercialized for RF applications in 2005. In last decade, huge efforts in cost reduction have been made in all processes from SiC substrate to packaging in real products. Currently, GaN HEMTs are widely used in RF applications especially mobile base station which requires low cost solutions. In this paper the history of GaN HEMT products and implementation of inverse Class-F and Doherty power amplifier for base station are presented.