Oleg Laboutin

IQE
  • Homoepitaxial GaN for vertical power and RF hybrid devices grown on production-scale MOCVD reactors

    Felix Kaess, IQE
    Oleg Laboutin, IQE
    Chen-Kai Kao, IQE
    Hugues Marchand, IQE

    Homoepitaxial GaN growth was implemented, studied, and improved in a production scale MOCVD reactor. The epitaxial GaN threading dislocation density was very close to that of the different free-standing GaN substrates and uniform across large diameters. We were able to limit incorporation of impurities to the low levels required for vertical electron drift layers by using appropriate growth process conditions. Different surface analysis studies revealed near-perfect step flow growth over large areas of the wafers.

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  • GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling

    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Oleg Laboutin, IQE
    Chien-Fong Lo, IQE
    Kevin O’Connor, IQE
    Daily Hill, IQE
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  • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

    Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Oleg Laboutin, IQE
    Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
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