Olof Kordina

SweGaN AB

  • 8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure

    Ding-Yuan Chen, SweGaN AB and Chalmers University of Technology
    Kai-Hsin Wen, SweGaN AB and Chalmers University of Technology
    Mattias Thorsell, Chalmers University of Technology
    Olof Kordina, SweGaN AB
    Jr-Tai Chen, SweGaN AB
    Niklas Rorsman, Chalmers University of Technology

    [embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/8.3.2021_Thin-Al0.5Ga0.5NGaN-HEMTs-on-QuanFINE-Structure_20210402.pdf” download=”all” viewer=”google”]

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  • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

    Jan Grünenpütt, United Monolithic Semiconductors France
    Daniel Sommer, United Monolithic Semiconductorss GmBH
    Jörg Splettstößer, United Monolithic Semiconductors – GmbH
    Olof Kordina, SweGaN AB
    Jr-Tai Chen, SweGaN AB
    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Hervé Blanck, United Monolithic Semiconductors

    [embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/8.2.2021_210331_Final_Paper_CS_Mantech_Quanfine_AlGaN-GaN-HEMT.pdf” download=”all” viewer=”google”]

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