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Olof Kordina
SweGaN AB
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8.3.2021 Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
Ding-Yuan Chen, SweGaN AB and Chalmers University of TechnologyKai-Hsin Wen, SweGaN AB and Chalmers University of TechnologyMattias Thorsell, Chalmers University of TechnologyOlof Kordina, SweGaN ABJr-Tai Chen, SweGaN ABNiklas Rorsman, Chalmers University of TechnologyDownload Paper -
8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
Jan Grünenpütt, United Monolithic Semiconductors FranceDaniel Sommer, United Monolithic Semiconductorss GmBHJörg Splettstößer, United Monolithic Semiconductors – GmbHOlof Kordina, SweGaN ABJr-Tai Chen, SweGaN ABHermann Stieglauer, United Monolithic Semiconductors GermanyHervé Blanck, United Monolithic SemiconductorsDownload PaperLoading...