P. Kurpas
Ferdinand-Braun-Institut
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Investigation and Reduction of Leakage Current Associated with Gate Encapsulation in by SiNx AlGaN/GaN HFETs
S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)P. Kurpas, Ferdinand-Braun-InstitutN. Chaturvedi, Ferdinand-Braun-Institut