Peter Brueckner

Fraunhofer IAF

  • 7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

    Stefano Leone, Fraunhofer IAF
    Birte-Julia Godejohann, Fraunhofer IAF
    Peter Brueckner, Fraunhofer IAF
    Lutz Kirste, Fraunhofer IAF
    Christian Manz, Fraunhofer IAF
    M. Swoboda, Siltectra GmbH
    C. Beyer, Siltectra GmbH
    Jan Richter, Siltectra GmbH
    Ruediger Quay, Fraunhofer IAF
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