Peter Moens

ON Semiconductor, Corp. R&D
  • May 01, 2019 // 1:30pm – 2:00pm

    9.1 AlGaN/GaN Power Devices in a Si World : From R&D to Manufacturing and Reliability

    Peter Moens, ON Semiconductor, Corp. R&D
    Download Paper
  • 13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer

    Aurore Constant, ON Semiconductor, Corp. R&D
    Joris Baele, ON Semiconductor, Corp. R&D
    Peter Coppens, ON Semiconductor, Corp. R&D
    Freddy De Pestel, ON Semiconductor, Corp. R&D
    Peter Moens, ON Semiconductor, Corp. R&D
    Marnix Tack, ON Semiconductor, Corp. R&D
    Download Paper
  • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

    Serge karboyan, University of Bristol
    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol
    Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
    Michael Uren, University of Bristol
    Peter Moens, ON Semiconductor, Corp. R&D
    Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
    Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
    Martin Kuball, University of Bristol
    Download Paper