Peter Moens

ON Semiconductor, Corp. R&D
  • May 01, 2019 // 1:30pm – 2:00pm

    9.1 AlGaN/GaN Power Devices in a Si World : From R&D to Manufacturing and Reliability

    Peter Moens, ON Semiconductor, Corp. R&D
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  • 13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer

    Aurore Constant, ON Semiconductor, Corp. R&D
    Joris Baele, ON Semiconductor, Corp. R&D
    Peter Coppens, ON Semiconductor, Corp. R&D
    Freddy De Pestel, ON Semiconductor, Corp. R&D
    Peter Moens, ON Semiconductor, Corp. R&D
    Marnix Tack, ON Semiconductor, Corp. R&D
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  • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

    Serge Karboyan, Nexperia. Manchester, UK
    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
    Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
    Michael Uren, University of Bristol
    Peter Moens, ON Semiconductor, Corp. R&D
    Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
    Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
    Martin Kuball, University of Bristol
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