Peter Moens
ON Semiconductor, Corp. R&D
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May 01, 2019 // 1:30pm – 2:00pm
9.1 AlGaN/GaN Power Devices in a Si World : From R&D to Manufacturing and Reliability
Download PaperPeter Moens, ON Semiconductor, Corp. R&D -
13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer
Download PaperAurore Constant, ON Semiconductor, Corp. R&DJoris Baele, ON Semiconductor, Corp. R&DPeter Coppens, ON Semiconductor, Corp. R&DFreddy De Pestel, ON Semiconductor, Corp. R&DPeter Moens, ON Semiconductor, Corp. R&DMarnix Tack, ON Semiconductor, Corp. R&D -
8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs
Download PaperSerge Karboyan, Nexperia. Manchester, UKSara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of BristolJames Pomeroy, University of BristolIndranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United KingdomMichael Uren, University of BristolPeter Moens, ON Semiconductor, Corp. R&DAbishek Banerjee, ON Semiconductor, Oudenaarde 9700, BelgiumMarkus Caesar, ON Semiconductor, Oudenaarde 9700, BelgiumMartin Kuball, University of Bristol