Peter Moens
ON Semiconductor, Corp. R&D
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May 01, 2019 // 1:30pm – 2:00pm
9.1 AlGaN/GaN Power Devices in a Si World : From R&D to Manufacturing and Reliability
Download PaperPeter Moens, ON Semiconductor, Corp. R&D -
13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer
Download PaperAurore Constant, ON Semiconductor, Corp. R&DJoris Baele, ON Semiconductor, Corp. R&DPeter Coppens, ON Semiconductor, Corp. R&DFreddy De Pestel, ON Semiconductor, Corp. R&DPeter Moens, ON Semiconductor, Corp. R&DMarnix Tack, ON Semiconductor, Corp. R&D -
8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs
Download PaperSerge Karboyan, Nexperia. Manchester, UKSara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of BristolJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKIndranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United KingdomMichael Uren, University of BristolPeter Moens, ON Semiconductor, Corp. R&DAbishek Banerjee, ON Semiconductor, Oudenaarde 9700, BelgiumMarkus Caesar, ON Semiconductor, Oudenaarde 9700, BelgiumMartin Kuball, University of Bristol