Peter Zampardi

Qorvo Inc.

  • 5a.2 Accurate Prediction of Resistor Variation using Minimum Sized Five Resistor TLM

    Dheeraj Mohata, Global Communication Semiconductors, LLC
    Crystal Chueng, Qorvo
    Brian Moser, Qorvo, Inc.
    Peter Zampardi, Qorvo Inc.
    Download Paper

  • 10B.4 – Characterizing Capacitor Top Plate Bias for More Accurate Electromagnetic Simulations

    Peter J. Zampardi, Qorvo, Inc.
    Q. Davenport, Qorvo, Inc.
    L. Hayden, Qorvo, Inc.

    10B.4 Final.2025

    As frequencies increase, the use of smaller value metal-insulator-metal (MIM) capacitors increases. For small capacitors, errors due to the bias of the top plate can cause significant errors. This bias is not correctly monitored with resistance based dW (RLWB) monitors. We present a simple capacitive based technique that uses only two test patterns to determine the value of the capacitive linewidth bias (CLWB) that is more appropriate for use electromagnetic (EM) simulation.

  • 11B.2 – Optimized Resistor Layer Photolithography Scheme with Dose Compensation for High Resistance Uniformity of Reactively Sputtered TaN Thin Film

    Stephanie Y. Chang, Skyworks Solutions, Inc.
    S. Y. Chang, Skyworks Solutions, Inc., Newbury Park, CA
    T. Brown, Skyworks Solutions, Inc., Newbury Park, CA
    Randy Bryie, Skyworks Solutions, Inc.
    R. Lee, Skyworks Solutions, Inc.
    Nercy Ebrahimi, Skyworks Solution Inc.

    11B.2 Final.2025

    Abstract
    Design of experiments (DOE) were performed to optimize resistance uniformity for TaN thin film resistors (TFR) across the Ta target’s life cycle. Fine-tuned photo-lithography recipes with exposure dose compensation (DC) minimized resistance variation introduced during the resistor layer’s (RL) photolithography and deposition processes. Experimental studies revealed how critical dimensions (CD) are influenced by the photoresist’s chemical amplification, substrate’s thermal history during post-exposure bake (PEB), and the coupling time (CT) between process-sensitive steps. The implementation of additional process controls within the RL fabrication process enhanced process capability (Cpk), tightened statistical process control (SPC) of TaN-related electrical parameters, and improved probe yield.