Abstract
InGaN laser diodes are critical for rapidly growing technologies such as AR/VR, quantum, sensing, materials processing, biomedical, and solid-state lighting. This talk will focus on the development of epitaxial transfer and wafer-level facet formation processes that are enabling a new class of high performance InGaN laser diodes to support these new technologies. The advantages of these processes, such as better thermal management, improved device performance, wafer level manufacturing, and the ability to generate novel, integrated device architectures will be discussed. We will also present updates on the performance of high efficiency laser diodes spanning violet to green wavelengths and DFB laser architectures that enable power scaling while maintaining narrow linewidth.