Qiang Li

Hong Kong University of Science and Technology

  • Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance

    Qiang Li, Hong Kong University of Science and Technology
    Xiuju Zhou, Hong Kong University of Science and Technology

  • 14.16 Comparison of MOCVD Grown GaSb on (001) Si Substrates Using the Aspect Ratio Trapping and Interfacial Misfit Growth Methods

    Billy Lai, Hong Kong University of Science and Technology
    Qiang Li, Hong Kong University of Science and Technology
    Kei May Lau, Hong Kong University of Science and Technology
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