R. Chebi

Coherent Corp.

  • 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC

    J. A. Turcaud, Coherent Corp.
    D. Lee, Coherent Corp.
    D. Rossman, Coherent Corp.
    J. Schuur, Coherent Corp.
    R. Chebi, Coherent Corp.

    4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing

  • 11B.4 – Towards Determining the Optimal Ion Implantation Temperature & Beam Current, Annealing Temperature & Time, in SiC Device Manufacturing

    V. Boldrini, CNR Institute for Microelectronics and Microsystems
    M. Canino, CNR Institute for Microelectronics and Microsystems
    M. Pieruccini, CNR Institute for Microelectronics and Microsystems
    R. Chebi, Coherent Corp.
    J. A. Turcaud, Coherent Corp.

    11B.4 Final.2025

    Abstract
    This study explores the effects of ion implantation and subsequent annealing on the resistivity of SiC. It investigates how implantation temperature, annealing temperature, and implantation beam current influence the recovery process of lattice damage and the resulting electrical properties. The results can be naturally interpreted in terms of cooperative molecular motions, which rule the structural rearrangements in locally disordered regions.
    Our findings indicate that implantation at moderate temperatures, i.e. 500°C – 650°C, strikes an optimal balance between damage creation and recovery, leading to lower resistivity after high-temperature annealing (e.g., 1800°C). Higher implantation beam current reduces the duration of implantation, increasing post-implantation disorder, which in turn enhances the effectiveness of subsequent annealing. These results suggest that both the degree of initial disorder and the efficiency of recovery during annealing are critical factors in optimizing the electrical properties of ion-implanted semiconductors.