Abstract
Electron mobility as high as 300 cm2/Vs and resistivity as low as 26 Ω·cm were demonstrated in Si-doped AlN by applying point and extended defect management to suppress compensation. Using this doping capability, AlN Schottky barrier diodes were designed and fabricated. The diodes are capable of passing kA/cm2 in the forward bias while simultaneously blocking voltages in the kV range. These results demonstrate the feasibility of AlN as a platform for next-generation power electronics.
R. Collazo
North Carolina State University
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2A.1 – Practical N-Type Doping in AlN for Power Electronics
R. Collazo, North Carolina State University -
11A.4 – Vertically Integrated Development of AlGaN Based UV Detectors
R. Kirste, Adroit Materials Inc.P. Reddy, Adroit Materials Inc.W. Mecouch, Adroit Materials Inc.R. Collazo, North Carolina State UniversityZ. Sitar, Adroit Materials Inc, North Carolina State UniversityAbstract
In this work, the development of solar-blind ultraviolet detectors based on the AlGaN materials system is discussed. This development includes design, growth, characterization, fabrication, and packaging of devices in a vertically integrated environment. The advantage of keeping all major steps needed to realize the devices in-house is discussed with focus on process control and holistic device manufacturing. Finally, device properties including sensitivity and efficiency are presented and an outlook on future developments is given.