R. D. Dupuis

Georgia Institute of Technology

  • Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance

    T.-T. Kao*, Student Presentation Georgia Institute of Technology
    J. Kim, Student Presentation Georgia Institute of Technology
    Y.-C. Lee, Student Presentation Georgia Institute of Technology
    M.-H. Ji, Student Presentation Georgia Institute of Technology
    T. Detchprohm, Student Presentation Georgia Institute of Technology
    R. D. Dupuis, Georgia Institute of Technology
    Download Paper

  • 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode

    Zhiyu Xu, Georgia Institute of Technology,
    Theeradetch Detchprohm, Georgia Institute of Technology
    Shyh-Chiang Shen, Georgia Institute of Technology
    A. Nepomuk Otte, Georgia Institute of Technology
    Russell D. Dupuis, Georgia Institute of Technology

    [embeddoc url=”https://csmantech.org/wp-content/uploads/2024/06/7.2.4.2024-Edge-Termination-Engineering-with-Shallow-Bevel-Mesas.pdf” download=”all”]