In this paper, we report our work on epitaxial growth of InAlN HEMTs for RF device applications. InAlN HEMTs were grown on 8” high resistivity silicon substrates. Various characterization techniques were used to analyze the quality of the epi wafers. An average sheet resistance (Rsh) of 206Ω/□, with a uniformity of 1.5% (1s/average), indicated a high quality and uniform 2DEG. Hall measurement showed a high sheet charge density of 2.27×1013cm−2 and a mobility of 1430cm2/(Vs). A pit free epi surface was obtained with optimized growth process of the active layers. T-gate RF devices fabricated on the InAlN epi wafers demonstrated an fT of 250GHz and an fMAX of 204 GHz, which are the record high values for GaN-based HEMTs on silicon.
InAlN HEMT Epi and RF Devices on 8”-SiHuili Xing, Cornell UniversityMing Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsAjit Paranjpe, Veeco InstrumentsDrew Hanser, Veeco Instruments, Inc.Kazuki Nomoto, Cornell UniversityLei Li, Cornell UniversityDebdeep Jena, Cornell UniversityDownload Paper
20.7 Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD ReactorBojan Mitrovic, Veeco MOCVD Operations.Randhir Bubber, Veeco InstrumentsJie Su, Veeco InstrumentsEarl Marcelo, Veeco MOCVD OperationsMandar Deshpande, Veeco Instruments Inc.Ajit Paranjpe, Veeco Instruments
7.3 RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD TechnologyMing Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsJie Su, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsSomit Joshi, Veeco InstrumentsAjit Paranjpe, Veeco Instruments