Randy Bryie
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5.3.2023 Integration of Nichrome Process as a Competitive Alternative to Tantalum Nitride for Thin Film Resistors in Compound Semiconductors
Stephanie Y. Chang, Skyworks Solutions, Inc.Shiban Tiku, Skyworks Solutions, Inc.Tom Brown, Skyworks Solutions, Inc.Lam Luu, Skyworks Solutions, Inc.Manohar Krishnappa, Skyworks Solutions, Inc.Randy Bryie, Skyworks Solutions, Inc.Nercy Ebrahimi, Skyworks Solution Inc. -
11.1.2.2024 Optimization of Photolithography Process for BiHEMT Gate Layer with High Critical Dimension Uniformity
Stephanie Y. Chang, Skyworks Solutions, Inc.Tom Brown, Skyworks Solutions, Inc.Randy Bryie, Skyworks Solutions, Inc.Rainier Lee, Skyworks Solutions, Inc.Loading...
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11B.2 – Optimized Resistor Layer Photolithography Scheme with Dose Compensation for High Resistance Uniformity of Reactively Sputtered TaN Thin Film
Stephanie Y. Chang, Skyworks Solutions, Inc.S. Y. Chang, Skyworks Solutions, Inc., Newbury Park, CAT. Brown, Skyworks Solutions, Inc., Newbury Park, CARandy Bryie, Skyworks Solutions, Inc.R. Lee, Skyworks Solutions, Inc.Nercy Ebrahimi, Skyworks Solution Inc.Abstract
Design of experiments (DOE) were performed to optimize resistance uniformity for TaN thin film resistors (TFR) across the Ta target’s life cycle. Fine-tuned photo-lithography recipes with exposure dose compensation (DC) minimized resistance variation introduced during the resistor layer’s (RL) photolithography and deposition processes. Experimental studies revealed how critical dimensions (CD) are influenced by the photoresist’s chemical amplification, substrate’s thermal history during post-exposure bake (PEB), and the coupling time (CT) between process-sensitive steps. The implementation of additional process controls within the RL fabrication process enhanced process capability (Cpk), tightened statistical process control (SPC) of TaN-related electrical parameters, and improved probe yield.