Rong Xuan

Technology Development Division, Episil-Precision Inc, Taiwan
  • May 01, 2019 // 3:00pm – 3:20pm

    9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process

    Yi-Sheng Chang, Chang Gung University
    Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
    Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
    Download Paper

  • Novel of Normally-off GaN HEMT Device Structure by Using Nano-rods Technology

    Chwan-Ying Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
    Young-Shying Chen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
    Lurng-Shehng Lee, Electronics and OptoElectronics Research Laboratories (EOL), ITR
    Chien-Chung Hung, Electronics and OptoElectronics Research Laboratories (EOL), ITR
    Cheng-Tyng Yen, Electronics and OptoElectronics Research Laboratories (EOL), ITR
    Suh-Fang Lin, Electronics and OptoElectronics Research Laboratories (EOL), ITR
    Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
    Wei-Hung Kuo, Industrial Technology Research Institute
    Tzu-Kun Ku, Electronics and OptoElectronics Research Laboratories (EOL), ITR

  • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

    Yi-Sheng Chang, Chang Gung University
    Bo-Hong Li, Chang Gung University
    Hsiang-Chun Wang, Chang Gung University
    Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
    Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
    Jung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
    Download Paper