Russell D. Dupuis

Georgia Institute of Technology, Atlanta, GA

  • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Yi-Che Lee, Georgia Institute of Technology
    Zachary Lochner, Georgia Institute of Technology
    Hee Jin Kim, Lumileds LLC
    Jae-Hyun Ryou, Georgia Institute of Technology
    Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  • May 12, 2022 // 3:20pm

    18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown

    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
    Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
    Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
    Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
    Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
    Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
    Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
    Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA

    Student Presentation

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  • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
    Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
    Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
    Theeradetch Detchprohm, Georgia Tech
    Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
    Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
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