Student Presentation
[embeddoc url=”https://csmantech.org/wp-content/uploads/2022/03/18.19.2022-Reliability-Study-of-Vertical-GaN-PIN-Rectifiers.pdf” download=”all”]
Russell D. Dupuis
Georgia Institute of Technology
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GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingYi-Che Lee, Georgia Institute of TechnologyZachary Lochner, Georgia Institute of TechnologyHee Jin Kim, Lumileds LLCJae-Hyun Ryou, Georgia Institute of TechnologyRussell D. Dupuis, Georgia Institute of Technology -
May 12, 2022 // 3:20pm
18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
Minkyu Cho, Georgia Institute of Technology, Atlanta, GAMarzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GATheeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GARussell D. Dupuis, Georgia Institute of TechnologyShyh-Chiang Shen, Georgia Institute of TechnologyQinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CATed Laurence, 2Lawrence Livermore National Laboratory, Livermore, CAMatthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CAJae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CAZhiyu Xu, Georgia Institute of Technology,Download Paper -
8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers
Minkyu Cho, Georgia Institute of Technology, Atlanta, GAMatthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CAJae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CAMarzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GAQinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CAZhiyu Xu, Georgia Institute of Technology,Theeradetch Detchprohm, Georgia Institute of TechnologyRussell D. Dupuis, Georgia Institute of TechnologyShyh-Chiang Shen, Georgia Institute of TechnologyDownload Paper[embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/8.5.2021_CS_MANTECH_Wafer-level-mapping-of-GaN-PIN-rectifier.pdf” download=”all” viewer=”google”]
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7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode
Zhiyu Xu, Georgia Institute of Technology,Theeradetch Detchprohm, Georgia Institute of TechnologyShyh-Chiang Shen, Georgia Institute of TechnologyA. Nepomuk Otte, Georgia Institute of TechnologyRussell D. Dupuis, Georgia Institute of Technology[embeddoc url=”https://csmantech.org/wp-content/uploads/2024/06/7.2.4.2024-Edge-Termination-Engineering-with-Shallow-Bevel-Mesas.pdf” download=”all”]