Typical n-type ohmic contact formation for GaN material systems requires high-temperature thermal processes. The high-temperature process often leads to a rough surface after the annealing step. Low-annealing-ohmic contact is advantageous to prevent undesired surface roughening on the metal stack during this thermal process. We report an approach to achieve low contact resistance on n-type GaN layers using a nitrogen plasma and a conventional Ti/Al-based metal stacks. We observed an as-deposit ohmic contact behavior on the n-type contact with a specific contact resistance (rc,sp) in the mid-E-6 Ω∙cm2 range. The rc,sp was further reduced to 6.8E-7 Ω∙cm2 after an annealing step at 600 oC.
Russell Dupuis
Georgia Tech
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A Study of Low-Annealing-Temperature Ohmic Contact on n-Type GaN Layers
Shyh-Chiang Shen, Georgia Institute of TechnologyMinkyu Cho, Georgia Institute of Technology, Atlanta, GAMarzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GATheeradetch Detchprohm, Georgia Institute of TechnologyRussell Dupuis, Georgia TechBarry Wu, Keysight Technologies, Inc.Don D’Avanzo, Keysight Technologies, Inc.Download Paper -
10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers
Tsung-Ting Kao, Georgia Institute of Technology,Xiao-Jia Jia, Georgia Institute of TechnologyYuh-Shiuan Liu, Georgia Institute of TechnologyTheeradetch Detchprohm, Georgia Institute of TechnologyRussell Dupuis, Georgia TechShyh-Chiang Shen, Georgia Institute of Technology -
7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode
Zhiyu Xu, Georgia Institute of Technology,Theeradetch Detchprohm, Georgia Institute of TechnologyShyh-Chiang Shen, Georgia Institute of TechnologyA. Nepomuk Otte, Georgia Institute of TechnologyRussell D. Dupuis, Georgia Institute of TechnologyLoading...