Ruxue Ni

Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences

  • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

    Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    C. Chen, Momentive Technologies
    Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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