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S. Decoutere
imec
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8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
K. Geens, imec,H. Hahn, AIXTRON SEH. Liang, imec,M. Borga, imecD. Cingu, imecS. You, imecM. Marx, AIXTRON SER. Oligschlaeger, AIXTRON SED. Fahle, AIXTRON SEM. Heuken, AIXTRON SEV. Odnoblyudov, Qromis, inc.O. Aktas, Qromis, Inc.C. Basceri, Qromis, Inc.S. Decoutere, imecDownload Paper -
6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
C. Basceri, Qromis, Inc.V. Odnoblyudov, Qromis, inc.C. Kurth, Qromis, Inc.M. Yamada, SHIN-ETSU CHEMICAL Co., LtdS. Konishi, SHIN-ETSU CHEMICAL Co., LtdM. Kawahara, SHIN-ETSU CHEMICAL Co., LtdC.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR CorpS. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR CorpJ. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR CorpKaren Geens, imec, Leuven, BelgiumA. Vohra, imec, Leuven, BelgiumH. De Pauw, CMST, imec & Ghent UniversityBenoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, BelgiumS. Decoutere, imecH. Hahn, AIXTRON SEM. Heuken, AIXTRON SEK. Tanigawa, OKI ELECTRIC INDUSTRY Co., LtdLoading...