S. Decoutere

imec
  • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

    K. Geens, imec,
    H. Hahn, AIXTRON SE
    H. Liang, imec,
    M. Borga, imec
    D. Cingu, imec
    S. You, imec
    M. Marx, AIXTRON SE
    R. Oligschlaeger, AIXTRON SE
    D. Fahle, AIXTRON SE
    M. Heuken, AIXTRON SE
    V. Odnoblyudov, Qromis, inc.
    O. Aktas, Qromis, Inc.
    C. Basceri, Qromis, Inc.
    S. Decoutere, imec
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  • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

    C. Basceri, Qromis, Inc.
    V. Odnoblyudov, Qromis, inc.
    C. Kurth, Qromis, Inc.
    M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
    S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
    M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
    C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    Karen Geens, imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    H. De Pauw, CMST, imec & Ghent University
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    S. Decoutere, imec
    H. Hahn, AIXTRON SE
    M. Heuken, AIXTRON SE
    K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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