S. Müller

Fraunhofer Institute

  • A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift

    P. Waltereit, Fraunhofer Institute
    A. Leuther, Fraunhofer Institute
    J. Rüster, Fraunhofer Institute
    H. Czap, Fraunhofer Institute
    R. Iannucci, Fraunhofer Institute
    S. Müller, Fraunhofer Institute
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  • From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices

    W. Bronner, Fraunhofer Institute for Applied Solid State Physics
    P. Waltereit, Fraunhofer Institute
    S. Müller, Fraunhofer Institute
    M. Dammann, Fraunhofer Institute for Applied Solid State Physics
    R. Kiefer, Fraunhofer Institute for Applied Solid State Physics
    Ph. Dennler, Fraunhofer Institute for Applied Solid State Physics
    F. van Raay, Fraunhofer Institute for Applied Solid State Physics
    M. Mußer, Fraunhofer Institute for Applied Solid State Physics
    R. Quay, Fraunhofer Institute for Applied Solid State Physics
    M. Mikulla, Fraunhofer Institute