Abstract
Design of experiments (DOE) were performed to optimize resistance uniformity for TaN thin film resistors (TFR) across the Ta target’s life cycle. Fine-tuned photo-lithography recipes with exposure dose compensation (DC) minimized resistance variation introduced during the resistor layer’s (RL) photolithography and deposition processes. Experimental studies revealed how critical dimensions (CD) are influenced by the photoresist’s chemical amplification, substrate’s thermal history during post-exposure bake (PEB), and the coupling time (CT) between process-sensitive steps. The implementation of additional process controls within the RL fabrication process enhanced process capability (Cpk), tightened statistical process control (SPC) of TaN-related electrical parameters, and improved probe yield.
S. Y. Chang
Skyworks Solutions, Inc., Newbury Park, CA
-
11B.2 – Optimized Resistor Layer Photolithography Scheme with Dose Compensation for High Resistance Uniformity of Reactively Sputtered TaN Thin Film
Stephanie Y. Chang, Skyworks Solutions, Inc.S. Y. Chang, Skyworks Solutions, Inc., Newbury Park, CAT. Brown, Skyworks Solutions, Inc., Newbury Park, CARandy Bryie, Skyworks Solutions, Inc.R. Lee, Skyworks Solutions, Inc.Nercy Ebrahimi, Skyworks Solution Inc.