S. You

imec
  • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

    K. Geens, imec,
    H. Hahn, AIXTRON SE
    H. Liang, imec,
    M. Borga, imec
    D. Cingu, imec
    S. You, imec
    M. Marx, AIXTRON SE
    R. Oligschlaeger, AIXTRON SE
    D. Fahle, AIXTRON SE
    M. Heuken, AIXTRON SE
    V. Odnoblyudov, Qromis, inc.
    O. Aktas, Qromis, Inc.
    C. Basceri, Qromis, Inc.
    S. Decoutere, imec
    Loader Loading...
    EAD Logo Taking too long?

    Reload Reload document
    | Open Open in new tab

    Download [162.00 B]

    Download Paper